TUNNEL DIODE

• The "Esaki Diode" is another name for the tunnel diode.
• It was created by "Leo Esaki" in 1957, and for that reason, he won the Nobel Prize in 1973.
• It has negative resistance, which means that when the power goes up, the current goes down.

Tunnel Diode

• If you put a lot of dopants into a p-n junction diode, you get a tunnel diode.
• When more voltage is added to a Tunnel diode, the electric current drops.
• When the voltage is very high, it acts like a normal p-n junction diode.
• Electricity flows through the Tunnel Diode because of the "Tunneling effect."
• It is used in high-frequency oscillators and amplifiers because it can switch quickly.
• Charge moves very slowly across the depletion layer because of the tunneling effect.

Working of the Tunnel Diode

• You can tell how wide the depletion region is by how much doping is in the semiconductor material.
• If the doping level is high, the depletion region is thin, and if the doping level is low, the depletion layer is wider.
• Because a tunnel diode is a very highly doped semiconductor device, the depletion area is very thin. This means that when low voltage is applied across the terminal in forward biasing, an electron moves across the depletion from an n-type semiconductor to a p-type semiconductor.

IMAGE SOURCE (THUMBNAIL)